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MOSFET N-CH 600V 4A TO252
| Part | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Vgs (Max) | Mounting Type | Supplier Device Package | FET Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | MOSFET (Metal Oxide) | -55 °C | 150 °C | 600 V | 263 pF | 56.8 W | 30 V | Surface Mount | TO-252 (DPAK) | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 6 nC | 900 mOhm | 4.1 V | 4 A | 10 V |