TP65H150G4LSG

Active

Transphorm

GAN FET N-CH 650V PQFN

Search across all available documentation for this part.

Active

Transphorm

GAN FET N-CH 650V PQFN

Technical Specifications

Parameters and characteristics for this part

Specification	TP65H150G4LSG

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	598 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-PowerTDFN
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	3-PQFN (8x8)
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.8 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology
Transphorm TP65H150G4LSG	-55 °C	150 °C	180 mOhm	3-PowerTDFN	8 nC	20 V	N-Channel	Surface Mount	4.8 V	650 V	598 pF	3-PQFN (8x8)	52 W	13 A	10 V	GaNFET (Gallium Nitride)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 13A (Tc) 52W (Tc) Surface Mount 3-PQFN (8x8)

Technical documentation and resources