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71V67803S133PFGI - 100-TQFP

71V67803S133PFGI

Obsolete
Renesas Electronics Corporation

3.3V 512K X 18 SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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71V67803S133PFGI - 100-TQFP

71V67803S133PFGI

Obsolete
Renesas Electronics Corporation

3.3V 512K X 18 SYNCHRONOUS 3.3V I/O PIPELINED SRAM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification71V67803S133PFGI
Access Time4.2 ns
Clock Frequency133 MHz
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization512 K
Memory Size9 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case100-LQFP
Supplier Device Package100-TQFP (14x14)
TechnologySRAM - Synchronous, SDR
Voltage - Supply [Max]3.465 V
Voltage - Supply [Min]3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

71V67803 Series

The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.