71V67803 Series
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM
Manufacturer: Renesas Electronics Corporation
Catalog
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Memory Format | Voltage - Supply [Max] | Voltage - Supply [Min] | Package / Case | Technology | Clock Frequency | Memory Type | Supplier Device Package | Memory Organization | Memory Size | Memory Interface | Mounting Type | Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 70 °C | 0 °C | SRAM | 3.465 V | 3.135 V | 100-LQFP | SRAM - Synchronous SDR | 166 MHz | Volatile | 100-TQFP (14x14) | 512 K | 9 Mbit | Parallel | Surface Mount | |
Renesas Electronics Corporation | 85 °C | -40 °C | SRAM | 3.465 V | 3.135 V | 165-TBGA | SRAM - Standard | 150 MHz | Volatile | 165-CABGA (13x15) | 512 K | 9 Mbit | Parallel | Surface Mount | 3.8 ns |
Renesas Electronics Corporation | 70 °C | 0 °C | SRAM | 3.465 V | 3.135 V | 165-TBGA | SRAM - Synchronous SDR | 166 MHz | Volatile | 165-CABGA (13x15) | 512 K | 9 Mbit | Parallel | Surface Mount | |
Renesas Electronics Corporation | 70 °C | 0 °C | SRAM | 3.465 V | 3.135 V | 100-LQFP | SRAM - Synchronous SDR | 166 MHz | Volatile | 100-TQFP (14x14) | 512 K | 9 Mbit | Parallel | Surface Mount | |
Renesas Electronics Corporation | 70 °C | 0 °C | SRAM | 3.465 V | 3.135 V | 119-BGA | SRAM - Synchronous SDR | 166 MHz | Volatile | 119-PBGA (14x22) | 512 K | 9 Mbit | Parallel | Surface Mount | |
Renesas Electronics Corporation | 70 °C | 0 °C | SRAM | 3.465 V | 3.135 V | 119-BGA | SRAM - Synchronous SDR | 133 MHz | Volatile | 119-PBGA (14x22) | 512 K | 9 Mbit | Parallel | Surface Mount | 4.2 ns |
Renesas Electronics Corporation | 70 °C | 0 °C | SRAM | 3.465 V | 3.135 V | 100-LQFP | SRAM - Synchronous SDR | 150 MHz | Volatile | 100-TQFP (14x14) | 512 K | 9 Mbit | Parallel | Surface Mount | 3.8 ns |
Renesas Electronics Corporation | 85 °C | -40 °C | SRAM | 3.465 V | 3.135 V | 100-LQFP | SRAM - Synchronous SDR | 133 MHz | Volatile | 100-TQFP (14x14) | 512 K | 9 Mbit | Parallel | Surface Mount | 4.2 ns |
Renesas Electronics Corporation | 85 °C | -40 °C | SRAM | 3.465 V | 3.135 V | 165-TBGA | SRAM - Synchronous SDR | 133 MHz | Volatile | 165-CABGA (13x15) | 512 K | 9 Mbit | Parallel | Surface Mount | 4.2 ns |
Renesas Electronics Corporation | 70 °C | 0 °C | SRAM | 3.465 V | 3.135 V | 100-LQFP | SRAM - Synchronous SDR | 133 MHz | Volatile | 100-TQFP (14x14) | 512 K | 9 Mbit | Parallel | Surface Mount | 4.2 ns |
Description
AI
The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.