RZR040P01TL

LTB

Rohm Semiconductor

POWER MOSFET, P CHANNEL, 12 V, 4 A, 0.022 OHM, TSMT, SURFACE MOUNT

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DocumentsTechnical Data Sheet EN

RZR040P01TL

LTB

Rohm Semiconductor

POWER MOSFET, P CHANNEL, 12 V, 4 A, 0.022 OHM, TSMT, SURFACE MOUNT

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RZR040P01TL

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	2350 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-96
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	TSMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

RZR040 Series

Part	FET Type	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package
Rohm Semiconductor RZR040P01TL	P-Channel	MOSFET (Metal Oxide)	SC-96	30 mOhm	30 nC	1 W	150 °C	12 V	2350 pF	1.5 V 4.5 V	4 A	10 V	Surface Mount	1 V	TSMT3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.13
		10	$ 0.71
		100	$ 0.47
		500	$ 0.36
		1000	$ 0.33
	Digi-Reel®	1	$ 1.13
		10	$ 0.71
		100	$ 0.47
		500	$ 0.36
		1000	$ 0.33
	Tape & Reel (TR)	3000	$ 0.28
		6000	$ 0.26
		9000	$ 0.25
		15000	$ 0.24
		21000	$ 0.24
		30000	$ 0.24
Newark	Each	1	$ 0.91
		10	$ 0.66
		100	$ 0.45
		500	$ 0.38
		1000	$ 0.32
		2500	$ 0.29
		12000	$ 0.26

Description

General part information

RZR040 Series

The RZR040P01TL is a P-channel middle Power MOSFET offers -12V drain source voltage and ±4A continuous drain current. It is suitable for use in switching applications.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet