POWER MOSFET, P CHANNEL, 12 V, 4 A, 0.022 OHM, TSMT, SURFACE MOUNT
| Part | FET Type | Technology | Package / Case | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Operating Temperature | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | P-Channel | MOSFET (Metal Oxide) | SC-96 | 30 mOhm | 30 nC | 1 W | 150 °C | 12 V | 2350 pF | 1.5 V 4.5 V | 4 A | 10 V | Surface Mount | 1 V | TSMT3 |