SCS304AHGC9

LTB

Rohm Semiconductor

DIODE SIL CARB 650V 4A TO220ACP

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LTB

Rohm Semiconductor

DIODE SIL CARB 650V 4A TO220ACP

Technical Specifications

Parameters and characteristics for this part

Specification	SCS304AHGC9

Capacitance @ Vr, F	200 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220ACP
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

650V, 4A, SMD, High Surge Resistance, Silicon-carbide (SiC) SBD

Part	Mounting Type	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Capacitance @ Vr, F	Supplier Device Package
Rohm Semiconductor SCS304AJTLL	Surface Mount	0 ns	20 µA	4 A	1.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	650 V	No Recovery Time	SiC (Silicon Carbide) Schottky	200 pF
Rohm Semiconductor SCS304AHGC9	Through Hole	0 ns	20 µA	4 A	1.5 V	TO-220-2	175 °C	650 V	No Recovery Time	SiC (Silicon Carbide) Schottky	200 pF	TO-220ACP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low forward voltage, negligible recovery time/current. Suitable for switch mode power supply, uninterruptible power supply, solar inverter, etc.

Technical documentation and resources

No documents available