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US1JE-TP - SS12E-TP

US1JE-TP

Obsolete
Micro Commercial Components

DIODE GEN PURP 600V 1A DO214AC

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US1JE-TP - SS12E-TP

US1JE-TP

Obsolete
Micro Commercial Components

DIODE GEN PURP 600V 1A DO214AC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationUS1JE-TP
Capacitance @ Vr, F17 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-50 °C
Package / CaseDO-214AC, SMA
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageDO-214AC (SMAE)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

US1J Series

Diode 600 V 1A Surface Mount DO-214AC (SMAE)

Documents

Technical documentation and resources