TK25E60X,S1X

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO220

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TK25E60X,S1X

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.5 V

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Vgs (Max)
Toshiba Semiconductor and Storage TK25E60X5,S1X	180 W	2400 pF	150 °C	600 V	10 V	4.5 V	25 A	Through Hole	TO-220	60 nC	N-Channel	140 mOhm	MOSFET (Metal Oxide)	TO-220-3	30 V
Toshiba Semiconductor and Storage TK25E60X,S1X	180 W	2400 pF	150 °C	600 V	10 V	3.5 V	25 A	Through Hole	TO-220	40 nC	N-Channel	125 mOhm	MOSFET (Metal Oxide)	TO-220-3	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	50	$ 2.70

General part information

N-Channel 600 V 25A (Ta) 180W (Tc) Through Hole TO-220

Technical documentation and resources