TK25E60 Series

Catalog

MOSFET N-CH 600V 25A TO220

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Vgs (Max)
Toshiba Semiconductor and Storage TK25E60X5,S1X	180 W	2400 pF	150 °C	600 V	10 V	4.5 V	25 A	Through Hole	TO-220	60 nC	N-Channel	140 mOhm	MOSFET (Metal Oxide)	TO-220-3	30 V
Toshiba Semiconductor and Storage TK25E60X,S1X	180 W	2400 pF	150 °C	600 V	10 V	3.5 V	25 A	Through Hole	TO-220	40 nC	N-Channel	125 mOhm	MOSFET (Metal Oxide)	TO-220-3	30 V