RSH070P05GZETB

NRND

Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 7A I(D), 45V, 0.039OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, ROHS COMPLIANT, SOP-8

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NRND

Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 7A I(D), 45V, 0.039OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, ROHS COMPLIANT, SOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	RSH070P05GZETB

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	45 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	47.6 nC
Input Capacitance (Ciss) (Max) @ Vds	4100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)
Rohm Semiconductor RSH070P05GZETB	8-SOIC	3.9 mm	0.154 in	8-SOP	MOSFET (Metal Oxide)	7 A	27 mOhm	4100 pF	Surface Mount	47.6 nC	4 V	10 V	-55 °C	150 °C	2 W	20 V	P-Channel	2.5 V	45 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 45 V 7A (Ta) 2W (Ta) Surface Mount 8-SOP

Technical documentation and resources