POWER FIELD-EFFECT TRANSISTOR, 7A I(D), 45V, 0.039OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, ROHS COMPLIANT, SOP-8
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Vgs (Max) | FET Type | Vgs(th) (Max) @ Id [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 8-SOIC | 3.9 mm | 0.154 in | 8-SOP | MOSFET (Metal Oxide) | 7 A | 27 mOhm | 4100 pF | Surface Mount | 47.6 nC | 4 V | 10 V | -55 °C | 150 °C | 2 W | 20 V | P-Channel | 2.5 V | 45 V |