RJH60T04DPQ-A1#T0
ActiveRenesas Electronics Corporation
IGBT 600V 30A TO-247A BUILT-IN FRD
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RJH60T04DPQ-A1#T0
ActiveRenesas Electronics Corporation
IGBT 600V 30A TO-247A BUILT-IN FRD
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RJH60T04DPQ-A1#T0 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Gate Charge | 87 nC |
| IGBT Type | Trench |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 208.3 W |
| Supplier Device Package | TO-247A |
| Td (on/off) @ 25°C | 136 ns |
| Td (on/off) @ 25°C | 54 ns |
| Test Condition | 15 V, 400 V, 30 A, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic | 1.95 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.72 | |
| 25 | $ 3.74 | |||
| 100 | $ 3.21 | |||
| 500 | $ 2.85 | |||
| 1000 | $ 2.44 | |||
| 2000 | $ 2.30 | |||
Description
General part information
60T0x Series Series
The RJH60T04DPQ-A1 600V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for current resonance circuit applications. It is available in a TO-247A package type.
Documents
Technical documentation and resources