60T0x Series Series

IGBT 600V 30A TO-247A Built-In FRD

Manufacturer: Renesas Electronics Corporation

Catalog

IGBT 600V 30A TO-247A Built-In FRD

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature	Test Condition	IGBT Type	Gate Charge	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]
Renesas Electronics Corporation RJH60T04DPQ-A1#T0	600 V	208.3 W	Through Hole	TO-247-3	TO-247A	150 °C	10 Ohm 15 V 30 A 400 V	Trench	87 nC	136 ns	54 ns	1.95 V	60 A

Catalog

IGBT 600V 30A TO-247A Built-In FRD

Description

The RJH60T04DPQ-A1 600V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for current resonance circuit applications. It is available in a TO-247A package type.