VS-3C12ET07T-M3

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Vishay General Semiconductor - Diodes Division

650 V POWER SIC GEN 3 MERGED PIN

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Vishay General Semiconductor - Diodes Division

650 V POWER SIC GEN 3 MERGED PIN

Technical Specifications

Parameters and characteristics for this part

Specification	VS-3C12ET07T-M3

Capacitance @ Vr, F	535 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	65 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Mounting Type	Speed	Supplier Device Package	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology
Vishay General Semiconductor - Diodes Division VS-3C12ET07T-M3	650 V	535 pF	Through Hole	No Recovery Time	TO-220AC	12 A	175 ░C	-55 C	0 ns	TO-220-2	65 µA	1.5 V	SiC (Silicon Carbide) Schottky
Vishay General Semiconductor - Diodes Division VS-3C12ET07S2L-M3	650 V	535 pF	Surface Mount	No Recovery Time	TO-263AB (D2PAK)	12 A	175 ░C	-55 C	0 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	65 µA	1.5 V	SiC (Silicon Carbide) Schottky

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