650 V POWER SIC GEN 3 MERGED PIN
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Mounting Type | Speed | Supplier Device Package | Current - Average Rectified (Io) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Package / Case | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 650 V | 535 pF | Through Hole | No Recovery Time | TO-220AC | 12 A | 175 ░C | -55 C | 0 ns | TO-220-2 | 65 µA | 1.5 V | SiC (Silicon Carbide) Schottky |
Vishay General Semiconductor - Diodes Division | 650 V | 535 pF | Surface Mount | No Recovery Time | TO-263AB (D2PAK) | 12 A | 175 ░C | -55 C | 0 ns | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 65 µA | 1.5 V | SiC (Silicon Carbide) Schottky |