G3R40MT12K

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GeneSiC Semiconductor

SILICON CARBIDE MOSFET N CHANNEL ENHANCEMENT MODE

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GeneSiC Semiconductor

SILICON CARBIDE MOSFET N CHANNEL ENHANCEMENT MODE

Technical Specifications

Parameters and characteristics for this part

Specification	G3R40MT12K

Current - Continuous Drain (Id) @ 25°C	71 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	106 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	333 W
Rds On (Max) @ Id, Vgs	48 mOhm
Supplier Device Package	TO-247-4
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.69 V

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
GeneSiC Semiconductor G3R40MT12J	15 V	48 mOhm	2.7 V	-55 °C	175 ░C	N-Channel	Surface Mount	TO-263-7	75 A	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	106 nC	1200 V	374 W	15 V
GeneSiC Semiconductor G3R40MT12K	15 V	48 mOhm	2.69 V	-55 °C	175 ░C	N-Channel	Through Hole	TO-247-4	71 A	TO-247-4	106 nC	1200 V		15 V	333 W
GeneSiC Semiconductor G3R40MT12D	15 V	48 mOhm	2.69 V	-55 °C	175 ░C	N-Channel	Through Hole	TO-247-3	71 A	TO-247-3	106 nC	1200 V		15 V	333 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 71A (Tc) 333W (Tc) Through Hole TO-247-4

Technical documentation and resources