SIC MOSFET N-CH 75A TO263-7
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Mounting Type | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 15 V | 48 mOhm | 2.7 V | -55 °C | 175 ░C | N-Channel | Surface Mount | TO-263-7 | 75 A | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | 106 nC | 1200 V | 374 W | 15 V | |
GeneSiC Semiconductor | 15 V | 48 mOhm | 2.69 V | -55 °C | 175 ░C | N-Channel | Through Hole | TO-247-4 | 71 A | TO-247-4 | 106 nC | 1200 V | 15 V | 333 W | |
GeneSiC Semiconductor | 15 V | 48 mOhm | 2.69 V | -55 °C | 175 ░C | N-Channel | Through Hole | TO-247-3 | 71 A | TO-247-3 | 106 nC | 1200 V | 15 V | 333 W |