US1K

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Taiwan Semiconductor Corporation

75NS, 1A, 800V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

75NS, 1A, 800V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	US1K

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Reverse Recovery Time (trr)	Speed	Package / Case	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Qualification	Grade
Taiwan Semiconductor Corporation US1K	75 ns	200 mA 500 ns	DO-214AC SMA	Surface Mount	Standard	150 °C	-55 °C	10 pF	1 A	5 µA	800 V	1.7 V	DO-214AC (SMA)
Taiwan Semiconductor Corporation US1K R3G	75 ns	200 mA 500 ns	DO-214AC SMA	Surface Mount	Standard	150 °C	-55 °C	10 pF	1 A	5 µA	800 V	1.7 V	DO-214AC (SMA)
Taiwan Semiconductor Corporation US1KHR3G	75 ns	200 mA 500 ns	DO-214AC SMA	Surface Mount	Standard	150 °C	-55 °C	10 pF	1 A	5 µA	800 V	1.7 V	DO-214AC (SMA)	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources