
US1K R3G
UnknownTaiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AC
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US1K R3G
UnknownTaiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO214AC
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | US1K R3G |
|---|---|
| Capacitance @ Vr, F | 10 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | DO-214AC, SMA |
| Reverse Recovery Time (trr) | 75 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | DO-214AC (SMA) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
US1K Series
Diode 800 V 1A Surface Mount DO-214AC (SMA)
Documents
Technical documentation and resources