FMM22-06PF

Obsolete

IXYS

MOSFET 2N-CH 600V 12A I4-PAC

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Obsolete

IXYS

MOSFET 2N-CH 600V 12A I4-PAC

Technical Specifications

Parameters and characteristics for this part

Specification	FMM22-06PF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	600 V
Gate Charge (Qg) (Max) @ Vgs	58 nC
Input Capacitance (Ciss) (Max) @ Vds	3600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	i4-Pac™-5
Power - Max [Max]	130 W
Rds On (Max) @ Id, Vgs	350 mOhm
Supplier Device Package	ISOPLUS i4-PAC™
Technology	MOSFET (Metal Oxide)

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Configuration	Current - Continuous Drain (Id) @ 25°C
IXYS FMM22-06PF	3600 pF	350 mOhm	ISOPLUS i4-PAC™	MOSFET (Metal Oxide)	-55 °C	150 °C	600 V	Through Hole	130 W	58 nC	i4-Pac™-5	2 N-Channel (Dual)	12 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 600V 12A 130W Through Hole ISOPLUS i4-PAC™

Technical documentation and resources

No documents available