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MOSFET 2N-CH 600V 12A I4-PAC
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Configuration | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 3600 pF | 350 mOhm | ISOPLUS i4-PAC™ | MOSFET (Metal Oxide) | -55 °C | 150 °C | 600 V | Through Hole | 130 W | 58 nC | i4-Pac™-5 | 2 N-Channel (Dual) | 12 A |