RT1C060UNTR

NRND

Rohm Semiconductor

MOSFET N-CH 20V 6A 8TSST

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NRND

Rohm Semiconductor

MOSFET N-CH 20V 6A 8TSST

Technical Specifications

Parameters and characteristics for this part

Specification	RT1C060UNTR

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	650 mW
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	8-TSST
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature	FET Type
Rohm Semiconductor RT1C060UNTR	1 V	1.5 V 4.5 V	20 V	650 mW	6 A	MOSFET (Metal Oxide)	10 V	870 pF	Surface Mount	11 nC	28 mOhm	8-TSST	150 °C	N-Channel

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General part information

N-Channel 20 V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST

Technical documentation and resources