Beta
⌘K
MOSFET N-CH 20V 6A 8TSST
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Supplier Device Package | Operating Temperature | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 1 V | 1.5 V 4.5 V | 20 V | 650 mW | 6 A | MOSFET (Metal Oxide) | 10 V | 870 pF | Surface Mount | 11 nC | 28 mOhm | 8-TSST | 150 °C | N-Channel |