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VS-15ETH06-1-M3 - TO-262

VS-15ETH06-1-M3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO262AA

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VS-15ETH06-1-M3 - TO-262

VS-15ETH06-1-M3

Active
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 15A TO262AA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-15ETH06-1-M3
Current - Average Rectified (Io)15 A
Current - Reverse Leakage @ Vr50 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-262AA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 8000$ 0.47

Description

General part information

15ETH06 Series

Diode 600 V 15A Through Hole TO-262AA

Documents

Technical documentation and resources