
15ETH06-1
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO262-3
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15ETH06-1
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO262-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 15ETH06-1 |
|---|---|
| Current - Average Rectified (Io) | 15 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Reverse Recovery Time (trr) | 35 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-262-3 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
15ETH06 Series
Diode 600 V 15A Through Hole TO-262-3
Documents
Technical documentation and resources