BAV20WS-G RRG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 200MA SOD323

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Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 200MA SOD323

Technical Specifications

Parameters and characteristics for this part

Specification	BAV20WS-G RRG

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SOD-323, SC-76
Reverse Recovery Time (trr)	50 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOD-323
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Reverse Recovery Time (trr)	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation BAV20W RHG	SOD-123F	100 nA	150 °C	-65 C	Surface Mount	Standard	50 ns	Any Speed	200 mA	1.25 V	5 pF	250 V	SOD-123F	200 mA
Taiwan Semiconductor Corporation BAV20WS-G RRG	SOD-323	100 nA	150 °C	-65 C	Surface Mount	Standard	50 ns	Any Speed	200 mA	1.25 V	5 pF		SC-76 SOD-323	200 mA
Taiwan Semiconductor Corporation BAV20W-G RHG	SOD-123	100 nA	150 °C	-65 C	Surface Mount	Standard	50 ns	Any Speed	200 mA	1.25 V	5 pF		SOD-123	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 150 V 200mA Surface Mount SOD-323

Technical documentation and resources