GC08MPS12-220

Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 43A TO220-2

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Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 43A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	GC08MPS12-220

Capacitance @ Vr, F	545 pF
Current - Average Rectified (Io)	43 A
Current - Reverse Leakage @ Vr	7 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
GeneSiC Semiconductor GC08MPS12-220	Through Hole	0 ns	TO-220-2	175 ░C	-55 C	545 pF	1.8 V	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-220-2	7 µA	1.2 kV	43 A
GeneSiC Semiconductor GC08MPS12-252	Surface Mount	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 ░C	-55 C	545 pF	1.8 V	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-252-2	7 µA	1.2 kV	40 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 43A Through Hole TO-220-2

Technical documentation and resources