Beta
⌘K
DIODE SIL CARB 1.2KV 43A TO220-2
| Part | Mounting Type | Reverse Recovery Time (trr) | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Technology | Speed | Supplier Device Package | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Through Hole | 0 ns | TO-220-2 | 175 ░C | -55 C | 545 pF | 1.8 V | SiC (Silicon Carbide) Schottky | No Recovery Time | TO-220-2 | 7 µA | 1.2 kV | 43 A |
GeneSiC Semiconductor | Surface Mount | 0 ns | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 175 ░C | -55 C | 545 pF | 1.8 V | SiC (Silicon Carbide) Schottky | No Recovery Time | TO-252-2 | 7 µA | 1.2 kV | 40 A |