TK25S06N1L,LXHQ

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A DPAK

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK25S06N1L,LXHQ

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	855 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	57 W
Rds On (Max) @ Id, Vgs [Max]	36.8 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs [Max]
Toshiba Semiconductor and Storage TK25S06N1L,LQ	18.5 mOhm	175 °C	25 A	DPAK+	MOSFET (Metal Oxide)	N-Channel	4.5 V 10 V	57 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	855 pF	20 V	2.5 V	Surface Mount
Toshiba Semiconductor and Storage TK25S06N1L,LXHQ		175 °C	25 A	DPAK+	MOSFET (Metal Oxide)	N-Channel	4.5 V 10 V	57 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	855 pF	20 V	2.5 V	Surface Mount	36.8 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly