MOSFET N-CH 60V 25A DPAK
| Part | Rds On (Max) @ Id, Vgs | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Technology | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Vgs(th) (Max) @ Id | Mounting Type | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 18.5 mOhm | 175 °C | 25 A | DPAK+ | MOSFET (Metal Oxide) | N-Channel | 4.5 V 10 V | 57 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 60 V | 855 pF | 20 V | 2.5 V | Surface Mount | |
Toshiba Semiconductor and Storage | 175 °C | 25 A | DPAK+ | MOSFET (Metal Oxide) | N-Channel | 4.5 V 10 V | 57 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 60 V | 855 pF | 20 V | 2.5 V | Surface Mount | 36.8 mOhm |