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ES1GLHMQG - MFG_DO-219AB

ES1GLHMQG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SUB SMA

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ES1GLHMQG - MFG_DO-219AB

ES1GLHMQG

Active
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SUB SMA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationES1GLHMQG
Capacitance @ Vr, F8 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr5 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-219AB
QualificationAEC-Q101
Reverse Recovery Time (trr)35 ns
Speed200 mA, 500 ns
Supplier Device PackageSub SMA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

ES1G Series

Diode 400 V 1A Surface Mount Sub SMA

Documents

Technical documentation and resources