MUR2X030A12

Obsolete

GeneSiC Semiconductor

DIODE MODULE GP 1200V 30A SOT227

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Obsolete

GeneSiC Semiconductor

DIODE MODULE GP 1200V 30A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	MUR2X030A12

Current - Average Rectified (Io) (per Diode)	30 A
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	85 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOT-227
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Mounting Type	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Speed
GeneSiC Semiconductor MUR2X030A12	175 ░C	-65 C	85 ns	Chassis Mount	Standard	SOT-227	1.2 kV	SOT-227-4 miniBLOC	30 A	2 Independent	200 mA 500 ns
GeneSiC Semiconductor MUR2X030A04	175 ░C	-55 C		Chassis Mount	Standard	SOT-227	400 V	SOT-227-4 miniBLOC	30 A	2 Independent	200 mA	25 µA	1.3 V	Standard Recovery >500ns
GeneSiC Semiconductor MUR2X030A02	175 ░C	-55 C	60 ns	Chassis Mount	Standard	SOT-227	200 V	SOT-227-4 miniBLOC	30 A	2 Independent	200 mA 500 ns	25 µA	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 1200 V 30A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources