DIODE MODULE GP 1200V 30A SOT227
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Mounting Type | Technology | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Package / Case | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 175 ░C | -65 C | 85 ns | Chassis Mount | Standard | SOT-227 | 1.2 kV | SOT-227-4 miniBLOC | 30 A | 2 Independent | 200 mA 500 ns | |||
GeneSiC Semiconductor | 175 ░C | -55 C | Chassis Mount | Standard | SOT-227 | 400 V | SOT-227-4 miniBLOC | 30 A | 2 Independent | 200 mA | 25 µA | 1.3 V | Standard Recovery >500ns | |
GeneSiC Semiconductor | 175 ░C | -55 C | 60 ns | Chassis Mount | Standard | SOT-227 | 200 V | SOT-227-4 miniBLOC | 30 A | 2 Independent | 200 mA 500 ns | 25 µA | 1 V |