RQ3E160ADTB
ActiveRohm Semiconductor
MOSFET N-CH 30V 16A 8HSMT
Deep-Dive with AI
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RQ3E160ADTB
ActiveRohm Semiconductor
MOSFET N-CH 30V 16A 8HSMT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ3E160ADTB |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 51 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2550 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.54 | |
| 10 | $ 0.43 | |||
| 100 | $ 0.32 | |||
| 500 | $ 0.30 | |||
| 1000 | $ 0.30 | |||
| Digi-Reel® | 1 | $ 0.54 | ||
| 10 | $ 0.43 | |||
| 100 | $ 0.32 | |||
| 500 | $ 0.30 | |||
| 1000 | $ 0.30 | |||
| Tape & Reel (TR) | 3000 | $ 0.25 | ||
| 6000 | $ 0.24 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.54 | |
| 10 | $ 0.50 | |||
| 25 | $ 0.47 | |||
| 50 | $ 0.44 | |||
| 100 | $ 0.41 | |||
| 250 | $ 0.38 | |||
| 500 | $ 0.36 | |||
| 1000 | $ 0.34 | |||
Description
General part information
RQ3E160 Series
N-Channel 30 V 16A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)