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MOSFET N-CH 30V 16A 8HSMT
| Part | Drain to Source Voltage (Vdss) | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id [Max] | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 30 V | 8-PowerVDFN | MOSFET (Metal Oxide) | 2550 pF | 8-HSMT (3.2x3) | 2 W | 2.5 V | 20 V | Surface Mount | 4.5 mOhm | N-Channel | 51 nC | 4.5 V 10 V | 150 °C |