MURT20020R

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GeneSiC Semiconductor

FAST RECOVERY / HIGH EFFICIENCY DIODES ROHS

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MURT20020R

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GeneSiC Semiconductor

FAST RECOVERY / HIGH EFFICIENCY DIODES ROHS

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MURT20020R

Current - Average Rectified (Io) (per Diode)	100 A
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Three Tower
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	Three Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

MURT200 Series

Part	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Supplier Device Package	Reverse Recovery Time (trr)	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Average Rectified (Io) (per Diode)	Mounting Type
GeneSiC Semiconductor MURT20010	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	75 ns	1 Pair Common Cathode	100 V	1.3 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20040	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	90 ns	1 Pair Common Cathode	400 V	1.35 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20010R	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	75 ns	1 Pair Common Anode	100 V	1.3 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20005	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	75 ns	1 Pair Common Cathode	50 V	1.3 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20060R	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	160 ns	1 Pair Common Anode	600 V	1.7 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20040R	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	90 ns	1 Pair Common Anode	400 V	1.35 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20060	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	160 ns	1 Pair Common Cathode	600 V	1.7 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20005R	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	75 ns	1 Pair Common Anode	50 V	1.3 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20020R	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	75 ns	1 Pair Common Anode	200 V	1.3 V	Three Tower	100 A	Chassis Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 87.13
LCSC	Piece	1	$ 101.54
		200	$ 40.52
		480	$ 39.16
		1000	$ 38.49

Description

General part information

MURT200 Series

Diode Array 1 Pair Common Anode 200 V 100A Chassis Mount Three Tower

Documents

Technical documentation and resources