MURT200 Series

Catalog

DIODE MODULE GP 100V 100A 3TOWER

Part	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Supplier Device Package	Reverse Recovery Time (trr)	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Current - Average Rectified (Io) (per Diode)	Mounting Type
GeneSiC Semiconductor MURT20010	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	75 ns	1 Pair Common Cathode	100 V	1.3 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20040	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	90 ns	1 Pair Common Cathode	400 V	1.35 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20010R	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	75 ns	1 Pair Common Anode	100 V	1.3 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20005	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	75 ns	1 Pair Common Cathode	50 V	1.3 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20060R	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	160 ns	1 Pair Common Anode	600 V	1.7 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20040R	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	90 ns	1 Pair Common Anode	400 V	1.35 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20060	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	160 ns	1 Pair Common Cathode	600 V	1.7 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20005R	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	75 ns	1 Pair Common Anode	50 V	1.3 V	Three Tower	100 A	Chassis Mount
GeneSiC Semiconductor MURT20020R	Standard	150 °C	-55 °C	200 mA 500 ns	Three Tower	75 ns	1 Pair Common Anode	200 V	1.3 V	Three Tower	100 A	Chassis Mount