GP3D030A065B

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SemiQ

DIODE SIL CARB 650V 30A TO247-2

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SemiQ

DIODE SIL CARB 650V 30A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D030A065B

Capacitance @ Vr, F	1247 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	75 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.65 V

Part	Technology	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Diode Configuration	Current - Average Rectified (Io) (per Diode)
SemiQ GP3D030A065B	SiC (Silicon Carbide) Schottky	30 A	650 V	Through Hole	TO-247-2	175 ░C	-55 C	No Recovery Time	1.65 V	TO-247-2	0 ns	75 µA	1247 pF
SemiQ GP3D030A120U	SiC (Silicon Carbide) Schottky		1.2 kV	Through Hole	TO-247-3	175 ░C	-55 C	No Recovery Time	1.6 V	TO-247-3	0 ns	30 µA		1 Pair Common Cathode	15 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 30A Through Hole TO-247-2

Technical documentation and resources