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DIODE SIL CARB 650V 30A TO247-2
| Part | Technology | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Voltage - Forward (Vf) (Max) @ If | Package / Case | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Diode Configuration | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SemiQ | SiC (Silicon Carbide) Schottky | 30 A | 650 V | Through Hole | TO-247-2 | 175 ░C | -55 C | No Recovery Time | 1.65 V | TO-247-2 | 0 ns | 75 µA | 1247 pF | ||
SemiQ | SiC (Silicon Carbide) Schottky | 1.2 kV | Through Hole | TO-247-3 | 175 ░C | -55 C | No Recovery Time | 1.6 V | TO-247-3 | 0 ns | 30 µA | 1 Pair Common Cathode | 15 A |