MBRT20030

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GeneSiC Semiconductor

DIODE MOD SCHOTT 30V 100A 3TOWER

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MBRT20030

Active

GeneSiC Semiconductor

DIODE MOD SCHOTT 30V 100A 3TOWER

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DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MBRT20030

Current - Average Rectified (Io) (per Diode)	100 A
Current - Reverse Leakage @ Vr	1 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Three Tower
Speed	200 mA, 500 ns
Supplier Device Package	Three Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	750 mV

MBRT200 Series

Part	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
GeneSiC Semiconductor MBRT20080R	Chassis Mount	Three Tower	1 mA	880 mV	1 Pair Common Anode	200 mA 500 ns	100 A	80 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20060	Chassis Mount	Three Tower	1 mA	800 mV	1 Pair Common Cathode	200 mA 500 ns	100 A	60 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20020	Chassis Mount	Three Tower	1 mA	750 mV	1 Pair Common Cathode	200 mA 500 ns	100 A	20 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20035R	Chassis Mount	Three Tower	1 mA	750 mV	1 Pair Common Anode	200 mA 500 ns	100 A	35 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT200150	Chassis Mount	Three Tower	1 mA	880 mV	1 Pair Common Cathode	200 mA 500 ns	100 A		Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20030	Chassis Mount	Three Tower	1 mA	750 mV	1 Pair Common Cathode	200 mA 500 ns	100 A	30 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT200100R	Chassis Mount	Three Tower	1 mA	880 mV	1 Pair Common Anode	200 mA 500 ns	100 A	100 V	Reverse Polarity Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20080	Chassis Mount	Three Tower	1 mA	880 mV	1 Pair Common Cathode	200 mA 500 ns	100 A	80 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20030R	Chassis Mount	Three Tower	1 mA	750 mV	1 Pair Common Anode	200 mA 500 ns	100 A	30 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT200200R	Chassis Mount	Three Tower	1 mA	920 mV	1 Pair Common Anode	200 mA 500 ns	100 A	200 V	Schottky	Three Tower	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 82.40

Description

General part information

MBRT200 Series

Diode Array 1 Pair Common Cathode 30 V 100A Chassis Mount Three Tower

Documents

Technical documentation and resources