MBRT200 Series

Catalog

DIODE MOD SCHOTT 80V 100A 3TOWER

Part	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
GeneSiC Semiconductor MBRT20080R	Chassis Mount	Three Tower	1 mA	880 mV	1 Pair Common Anode	200 mA 500 ns	100 A	80 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20060	Chassis Mount	Three Tower	1 mA	800 mV	1 Pair Common Cathode	200 mA 500 ns	100 A	60 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20020	Chassis Mount	Three Tower	1 mA	750 mV	1 Pair Common Cathode	200 mA 500 ns	100 A	20 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20035R	Chassis Mount	Three Tower	1 mA	750 mV	1 Pair Common Anode	200 mA 500 ns	100 A	35 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT200150	Chassis Mount	Three Tower	1 mA	880 mV	1 Pair Common Cathode	200 mA 500 ns	100 A		Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20030	Chassis Mount	Three Tower	1 mA	750 mV	1 Pair Common Cathode	200 mA 500 ns	100 A	30 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT200100R	Chassis Mount	Three Tower	1 mA	880 mV	1 Pair Common Anode	200 mA 500 ns	100 A	100 V	Reverse Polarity Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20080	Chassis Mount	Three Tower	1 mA	880 mV	1 Pair Common Cathode	200 mA 500 ns	100 A	80 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT20030R	Chassis Mount	Three Tower	1 mA	750 mV	1 Pair Common Anode	200 mA 500 ns	100 A	30 V	Schottky	Three Tower	150 °C	-55 °C
GeneSiC Semiconductor MBRT200200R	Chassis Mount	Three Tower	1 mA	920 mV	1 Pair Common Anode	200 mA 500 ns	100 A	200 V	Schottky	Three Tower	150 °C	-55 °C