71V2546S100BGI8

Obsolete

Renesas Electronics Corporation

3.3V 128KX36 ZBT SYNCHRONOUS PIPELINED SRAM WITH 2.5V I/O

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Documents71V2546S Data Sheet Datasheet

71V2546S100BGI8

Obsolete

Renesas Electronics Corporation

3.3V 128KX36 ZBT SYNCHRONOUS PIPELINED SRAM WITH 2.5V I/O

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Documents71V2546S Data Sheet Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71V2546S100BGI8

Access Time	5 ns
Clock Frequency	100 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	128K x 36
Memory Size	4.5 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	119-BGA
Supplier Device Package	119-PBGA (14x22)
Technology	SRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V2546 Series

3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O

Part	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Memory Size	Memory Organization	Memory Type	Technology	Supplier Device Package	Clock Frequency	Access Time	Memory Format	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]
Renesas Electronics Corporation 71V2546S150PFG8	100-LQFP	70 °C	0 °C	Surface Mount	4.5 Mbit	128K x 36	Volatile	SRAM - Synchronous SDR (ZBT)	100-TQFP (14x14)	150 MHz	3.8 ns	SRAM	Parallel	3.465 V	3.135 V
Renesas Electronics Corporation 71V2546S150PFG	100-LQFP	70 °C	0 °C	Surface Mount	4.5 Mbit	128K x 36	Volatile	SRAM - Synchronous SDR (ZBT)	100-TQFP (14x14)	150 MHz	3.8 ns	SRAM	Parallel	3.465 V	3.135 V
Renesas Electronics Corporation 71V2546S133PFG	100-LQFP	70 °C	0 °C	Surface Mount	4.5 Mbit	128K x 36	Volatile	SRAM - Synchronous SDR (ZBT)	100-TQFP (14x14)	133 MHz	4.2 ns	SRAM	Parallel	3.465 V	3.135 V
Renesas Electronics Corporation 71V2546S100BGI8	119-BGA	85 °C	-40 °C	Surface Mount	4.5 Mbit	128K x 36	Volatile	SRAM - Synchronous SDR (ZBT)	119-PBGA (14x22)	100 MHz	5 ns	SRAM	Parallel	3.465 V	3.135 V
Renesas Electronics Corporation 71V2546S133BGI	119-BGA	85 °C	-40 °C	Surface Mount	4.5 Mbit	128K x 36	Volatile	SRAM - Synchronous SDR (ZBT)	119-PBGA (14x22)	133 MHz	4.2 ns	SRAM	Parallel	3.465 V	3.135 V
Renesas Electronics Corporation 71V2546S133PFG8	100-LQFP	70 °C	0 °C	Surface Mount	4.5 Mbit	128K x 36	Volatile	SRAM - Synchronous SDR (ZBT)	100-TQFP (14x14)	133 MHz	4.2 ns	SRAM	Parallel	3.465 V	3.135 V
Renesas Electronics Corporation 71V2546S100PFG8	100-LQFP	70 °C	0 °C	Surface Mount	4.5 Mbit	128K x 36	Volatile	SRAM - Synchronous SDR (ZBT)	100-TQFP (14x14)	100 MHz	5 ns	SRAM	Parallel	3.465 V	3.135 V
Renesas Electronics Corporation 71V2546S100PFG	100-LQFP	70 °C	0 °C	Surface Mount	4.5 Mbit	128K x 36	Volatile	SRAM - Synchronous SDR (ZBT)	100-TQFP (14x14)	100 MHz	5 ns	SRAM	Parallel	3.465 V	3.135 V
Renesas Electronics Corporation 71V2546S150BG	119-BGA	70 °C	0 °C	Surface Mount	4.5 Mbit	128K x 36	Volatile	SRAM - Synchronous SDR (ZBT)	119-PBGA (14x22)	150 MHz	3.8 ns	SRAM	Parallel	3.465 V	3.135 V
Renesas Electronics Corporation 71V2546S133BG	119-BGA	70 °C	0 °C	Surface Mount	4.5 Mbit	128K x 36	Volatile	SRAM - Synchronous SDR (ZBT)	119-PBGA (14x22)	133 MHz	4.2 ns	SRAM	Parallel	3.465 V	3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V2546 Series

The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources

71V2546S Data Sheet

Datasheet