SCS308APC9

LTB

Rohm Semiconductor

DIODE SILICON CARBIDE 650V 8A

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LTB

Rohm Semiconductor

DIODE SILICON CARBIDE 650V 8A

Technical Specifications

Parameters and characteristics for this part

Specification	SCS308APC9

Capacitance @ Vr, F	400 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V, 8 A

Part	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Speed	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr
Rohm Semiconductor SCS308APC9	8 A	650 V	Through Hole	No Recovery Time	SiC (Silicon Carbide) Schottky	TO-220-2	1.5 V 8 A	175 °C	0 ns	400 pF	40 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 8A Through Hole

Technical documentation and resources