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DIODE SILICON CARBIDE 650V 8A
| Part | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Speed | Technology | Package / Case | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 8 A | 650 V | Through Hole | No Recovery Time | SiC (Silicon Carbide) Schottky | TO-220-2 | 1.5 V 8 A | 175 °C | 0 ns | 400 pF | 40 µA |