UGF12JD C0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A ITO220AC

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	UGF12JD C0G

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	45 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	3.1 V

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Speed	Mounting Type	Qualification	Grade
Taiwan Semiconductor Corporation UGF12JD C0G	3.1 V	600 V	ITO-220AC	175 ░C	-55 C	Standard	TO-220-2 Full Pack	12 A	500 nA	45 ns	200 mA 500 ns	Through Hole
Taiwan Semiconductor Corporation UGF12JDHC0G	3.1 V	600 V	ITO-220AC	175 ░C	-55 C	Standard	TO-220-2 Full Pack	12 A	500 nA	45 ns	200 mA 500 ns	Through Hole	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 12A Through Hole ITO-220AC

Technical documentation and resources

No documents available