UGF12JDHC0G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A ITO220AC

Search across all available documentation for this part.

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 12A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	UGF12JDHC0G

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	500 nA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Qualification	AEC-Q101
Reverse Recovery Time (trr)	45 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	3.1 V

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Speed	Mounting Type	Qualification	Grade
Taiwan Semiconductor Corporation UGF12JD C0G	3.1 V	600 V	ITO-220AC	175 ░C	-55 C	Standard	TO-220-2 Full Pack	12 A	500 nA	45 ns	200 mA 500 ns	Through Hole
Taiwan Semiconductor Corporation UGF12JDHC0G	3.1 V	600 V	ITO-220AC	175 ░C	-55 C	Standard	TO-220-2 Full Pack	12 A	500 nA	45 ns	200 mA 500 ns	Through Hole	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 12A Through Hole ITO-220AC

Technical documentation and resources

No documents available