GD25LQ40CEIGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 4MBIT SPI/QUAD 8USON

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GD25LQ40CEIGR

Active

GigaDevice Semiconductor (HK) Limited

IC FLASH 4MBIT SPI/QUAD 8USON

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DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	GD25LQ40CEIGR

Clock Frequency	104 MHz
Memory Format	FLASH
Memory Interface	SPI - Quad I/O
Memory Organization	512 K
Memory Size	512 kb
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-XFDFN Exposed Pad
Supplier Device Package	8-USON (2x3)
Technology	FLASH - NOR
Voltage - Supply [Max]	2.1 V
Voltage - Supply [Min]	1.65 V
Write Cycle Time - Word, Page [custom]	50 µs
Write Cycle Time - Word, Page [custom]	2.4 ms

GD25LQ40 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Memory Size	Memory Type	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Mounting Type	Memory Format	Access Time	Technology	Memory Organization	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package	Package / Case [y]	Package / Case [x]
GigaDevice Semiconductor (HK) Limited GD25LQ40EKIGR	85 °C	-40 °C	8-XFDFN Exposed Pad	512 kb	Non-Volatile	SPI - Quad I/O	133 MHz	60 µs	2.4 ms	Surface Mount	FLASH	6 ns	FLASH - NOR (SLC)	512 K	2 V	1.65 V	8-USON (1.5x1.5)
GigaDevice Semiconductor (HK) Limited GD25LQ40CE2GR	105 °C	-40 °C	8-XFDFN Exposed Pad	512 kb	Non-Volatile	SPI - Quad I/O	90 MHz	80 µs	3 ms	Surface Mount	FLASH	7 ns	FLASH - NOR (SLC)	512 K	2.1 V	1.65 V	8-USON (3x2)
GigaDevice Semiconductor (HK) Limited GD25LQ40EEAGR	125 °C	-40 °C	8-XFDFN Exposed Pad	512 kb	Non-Volatile	SPI - Quad I/O	133 MHz	100 µs	4 ms	Surface Mount	FLASH	6 ns	FLASH - NOR (SLC)	512 K	2 V	1.65 V	8-USON (3x2)
GigaDevice Semiconductor (HK) Limited GD25LQ40CEIGR	85 °C	-40 °C	8-XFDFN Exposed Pad	512 kb	Non-Volatile	SPI - Quad I/O	104 MHz	50 µs	2.4 ms	Surface Mount	FLASH		FLASH - NOR	512 K	2.1 V	1.65 V	8-USON (2x3)
GigaDevice Semiconductor (HK) Limited GD25LQ40ESIGR	85 °C	-40 °C	8-SOIC	512 kb	Non-Volatile	SPI - Quad I/O	133 MHz	60 µs	2.4 ms	Surface Mount	FLASH	6 ns	FLASH - NOR (SLC)	512 K	2 V	1.65 V	8-SOP	5.3 mm	0.209 "
GigaDevice Semiconductor (HK) Limited GD25LQ40CTIGR	85 °C	-40 °C	8-SOIC	512 kb	Non-Volatile	SPI - Quad I/O	104 MHz	50 µs	2.4 ms	Surface Mount	FLASH		FLASH - NOR	512 K	2.1 V	1.65 V	8-SOP	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LQ40EEEGR	125 °C	-40 °C	8-XFDFN Exposed Pad	512 kb	Non-Volatile	SPI - Quad I/O	133 MHz	100 µs	4 ms	Surface Mount	FLASH	6 ns	FLASH - NOR (SLC)	512 K	2 V	1.65 V	8-USON (3x2)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

GD25LQ40 Series

FLASH - NOR Memory IC 4Mbit SPI - Quad I/O 104 MHz 8-USON (2x3)

Documents

Technical documentation and resources