GD25LQ40 Series

Manufacturer: GigaDevice Semiconductor (HK) Limited

Catalog

IC FLASH 4MBIT SPI/QUAD 8USON

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Memory Size	Memory Type	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Mounting Type	Memory Format	Access Time	Technology	Memory Organization	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package	Package / Case [y]	Package / Case [x]
GigaDevice Semiconductor (HK) Limited GD25LQ40EKIGR	85 °C	-40 °C	8-XFDFN Exposed Pad	512 kb	Non-Volatile	SPI - Quad I/O	133 MHz	60 µs	2.4 ms	Surface Mount	FLASH	6 ns	FLASH - NOR (SLC)	512 K	2 V	1.65 V	8-USON (1.5x1.5)
GigaDevice Semiconductor (HK) Limited GD25LQ40CE2GR	105 °C	-40 °C	8-XFDFN Exposed Pad	512 kb	Non-Volatile	SPI - Quad I/O	90 MHz	80 µs	3 ms	Surface Mount	FLASH	7 ns	FLASH - NOR (SLC)	512 K	2.1 V	1.65 V	8-USON (3x2)
GigaDevice Semiconductor (HK) Limited GD25LQ40EEAGR	125 °C	-40 °C	8-XFDFN Exposed Pad	512 kb	Non-Volatile	SPI - Quad I/O	133 MHz	100 µs	4 ms	Surface Mount	FLASH	6 ns	FLASH - NOR (SLC)	512 K	2 V	1.65 V	8-USON (3x2)
GigaDevice Semiconductor (HK) Limited GD25LQ40CEIGR	85 °C	-40 °C	8-XFDFN Exposed Pad	512 kb	Non-Volatile	SPI - Quad I/O	104 MHz	50 µs	2.4 ms	Surface Mount	FLASH		FLASH - NOR	512 K	2.1 V	1.65 V	8-USON (2x3)
GigaDevice Semiconductor (HK) Limited GD25LQ40ESIGR	85 °C	-40 °C	8-SOIC	512 kb	Non-Volatile	SPI - Quad I/O	133 MHz	60 µs	2.4 ms	Surface Mount	FLASH	6 ns	FLASH - NOR (SLC)	512 K	2 V	1.65 V	8-SOP	5.3 mm	0.209 "
GigaDevice Semiconductor (HK) Limited GD25LQ40CTIGR	85 °C	-40 °C	8-SOIC	512 kb	Non-Volatile	SPI - Quad I/O	104 MHz	50 µs	2.4 ms	Surface Mount	FLASH		FLASH - NOR	512 K	2.1 V	1.65 V	8-SOP	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LQ40EEEGR	125 °C	-40 °C	8-XFDFN Exposed Pad	512 kb	Non-Volatile	SPI - Quad I/O	133 MHz	100 µs	4 ms	Surface Mount	FLASH	6 ns	FLASH - NOR (SLC)	512 K	2 V	1.65 V	8-USON (3x2)