2SK2744(F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 50V 45A TO3P

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 50V 45A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2744(F)

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	TO-3P(N)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	FET Type	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage 2SK2744(F)	SC-65-3 TO-3P-3	125 W	45 A	150 °C	20 mOhm	10 V	TO-3P(N)	Through Hole	N-Channel	MOSFET (Metal Oxide)	3.5 V	20 V	68 nC	50 V	2300 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 50 V 45A (Ta) 125W (Tc) Through Hole TO-3P(N)

Technical documentation and resources